Farad (F)
The SI unit of electrical capacitance, defined as one coulomb of charge per volt. Named after Michael Faraday. 1 F = 1 C/V.
Common uses: Large capacitors, energy storage, power factor correction, supercapacitors.
Convert between farad, microfarad, nanofarad, picofarad, and other capacitance units with scientific precision.
The SI unit of electrical capacitance, defined as one coulomb of charge per volt. Named after Michael Faraday. 1 F = 1 C/V.
Common uses: Large capacitors, energy storage, power factor correction, supercapacitors.
One millionth of a farad. 1 µF = 10⁻⁶ F. The most commonly used unit in practical electronics.
Common uses: Electrolytic capacitors, filter circuits, power supplies, audio equipment.
One billionth of a farad. 1 nF = 10⁻⁹ F. Commonly used in signal and coupling circuits.
Common uses: Film capacitors, coupling capacitors, decoupling, RF circuits, oscillators.
One trillionth of a farad. 1 pF = 10⁻¹² F. Used for high-frequency and low-capacitance applications.
Common uses: Ceramic capacitors, RF tuning, parasitic capacitance, high-frequency circuits.
One thousandth of a farad. 1 mF = 10⁻³ F. Used for moderate capacitance values.
Common uses: Large electrolytic capacitors, filter networks, timing circuits.
Alternative SI expression of capacitance, directly from the definition of capacitance. 1 C/V = 1 F.
Application: Charge storage calculations, capacitor design, electrical energy calculations.
One thousand farads. 1 kF = 1,000 F. Used for supercapacitors and energy storage systems.
Common uses: Energy harvesting, backup power, supercapacitor banks, power conditioning.
One quadrillionth of a farad. 1 fF = 10⁻¹⁵ F. Used for parasitic and intrinsic capacitances.
Common uses: IC interconnect analysis, quantum devices, nano-electronics, parasitic extraction.
CGS electromagnetic unit of capacitance. 1 abF = 10⁹ F. Extremely large unit in CGS-emu system.
Application: Legacy CGS calculations, high-capacitance measurements in historical systems.
CGS electrostatic unit of capacitance. 1 stF ≈ 1.112 × 10⁻¹² F. Part of CGS-esu system.
Application: Theoretical electrostatics, CGS-esu calculations, academic physics.